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| LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications. * Fast trr, < 3.0 ns * Low C , < 2.0 pF rr LM1MA141KT1G LM1MA142KT1G SC-70/SOT-323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT 3 We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device LM1MA141KT1G LM1MA141KT3G LM1MA142KT1G LM1MA142KT3G Package SOT-323/SC-70 SOT-323/SC-70 SOT-323/SC-70 SOT-323/SC-70 Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 1 2 SOT-323 /SC - 70 CATHODE 3 DEVICE MARKING LM1MA141KT1G = MH LM1MA142KT1G=MI 1 MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage LM1MA141KT1G LM1MA142KT1G Peak Reverse Voltage L M1MA141KT1G L M1MA142KT1G Forward Current Peak Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Symbol VR VRM IF IFM IFSM(1) Value 40 80 40 80 100 225 500 Unit Vdc Vdc mAdc mAdc mAdc ANODE 2 NO CONNECTION Marking Symbol Type No. 141K 142K Symbol MH MI MHX The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. Max 150 150 -55 ~ +150 Unit mW C C ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Reverse Voltage Leakage Current LM1MA141KT1G LM1MA142KT1G Forward Voltage Reverse Breakdown Voltage LM1MA141KT1G L M1MA142KT1G Diode Capacitance Reverse Recovery 1. t = 1 SEC 2. trr Test Circuit Time CD trr(2) VR=0, f=1.0 MHz IF=10mA,VR=6.0V RL=100,Irr=0.1 IR Symbol IR VF VR Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 A Min -- -- -- 40 80 -- -- Max 0.1 0.1 1.2 -- -- 2.0 3.0 Unit Adc Vdc Vdc pF ns 1/3 LESHAN RADIO COMPANY, LTD. LM1MA141KT1G LM1MA142KT1G RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE IF, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Forward Voltage IR, REVERSE CURRENT (A) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current C D, DIODE CAPACITANCE (pF) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance 2/3 LESHAN RADIO COMPANY, LTD. LM1MA141KT1G LM1MA142KT1G SC-70/SOT-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A L 3 DIM A B C D G H J K L N S S 1 2 B D G C 0.05 (0.002) N K J INCHES MILLIMETERS MIN MA X MIN MA X 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 0.032 0.040 0.80 1.00 0.012 0.016 0.30 0.40 0.047 0.055 1.20 1.40 0.000 0.004 0.00 0.10 0.004 0.010 0.10 0.25 0.017 REF 0.425 REF 0.026 BSC 0.650 BSC 0.028 REF 0.700 REF 0.079 0.095 2.00 2.40 H 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm 3/3 |
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